This paper discusses cascode topology of low-noise amplifier(LNA) used in wireless communication receivers. Many researchers have developed circuits that achieve high-speed performance while consuming less power, particularly for Internet of Things (IoT) devices. IoT applications are rapidly evolving, leading to an increasing demand for LNAs in 5G networks that operate at high-frequency range. Due to limitations in CMOS technology, designing these circuits has become increasingly challenging, leading us to focus on GaN HEMT technology.
The primary objective is to design an LNA that meets several key requirements: a low noise figure, high gain, good stability, effective input-output impedance matching, low power consumption, and compact size. Based on these criteria, we aim to design an effective low- noise amplifier.